Characterization of thermally annealed diamond like carbon (DLC) and silicon modified DLC films by Raman spectroscopy

A. A. Ogwu, R. W. Lamberton, S. Morley, P. Maguire, J. McLaughlin

    Research output: Contribution to journalArticlepeer-review

    94 Citations (Scopus)

    Abstract

    Raman spectroscopy has been used to investigate the structural changes in thermally annealed diamond like carbon (a-C:H) and silicon modified diamond like carbon (a-C:H:Si) films prepared by plasma enhanced chemical vapour deposition (PECVD) using a 514.53 nm argon ion laser excitation. The changes in the Raman spectra of the films has been used to monitor structural modifications with increasing annealing temperature. The present investigation indicates that the rate of these structural modifications is dependent on both the annealing temperature and the negative self-bias voltage applied during the film deposition process for a fixed annealing time.

    Original languageEnglish
    Pages (from-to)335-344
    Number of pages10
    JournalPhysica B: Condensed Matter
    Volume269
    Issue number3-4
    DOIs
    Publication statusPublished - Sep 1999

    Bibliographical note

    Copyright:
    Copyright 2017 Elsevier B.V., All rights reserved.

    Fingerprint

    Dive into the research topics of 'Characterization of thermally annealed diamond like carbon (DLC) and silicon modified DLC films by Raman spectroscopy'. Together they form a unique fingerprint.

    Cite this