Epitaxial strain stabilization of a ferroelectric phase in PbZrO ₃ thin films

Material Science

• Thin Films 100%
• Ferroelectric Material 100%
• Strain 100%
• Temperature 75%
• Heterojunction 50%
• Film 25%
• Pulsed Laser Deposition 25%
• Thick Films 25%
• Microscopy 25%
• Film Thickness 25%
• Electrical Property 25%
• Electron Diffraction 25%
• Ferroelectricity 25%
• Antiferroelectric Material 25%

Keyphrases

• Epitaxial Strain 100%
• PbZrO3 100%
• Ferroelectric Phase 100%
• Room Temperature 30%
• Remnant Polarization 20%
• Rhombohedral Phase 20%
• Pulsed Laser Deposition 10%
• Ultrathin 10%
• Thick Film 10%
• Compressive Stress 10%
• Thickness Dependence 10%
• Film Thickness 10%
• Electrical Properties 10%
• Hysteresis Loop 10%
• Micro-Raman 10%
• Epitaxial 10%
• Piezoresponse Force Microscopy 10%
• Raman Measurements 10%
• Ferroelectric Properties 10%
• SrTiO3 10%
• SrRuO3 10%
• Orthorhombic Phase 10%
• Ferroelectric Transition 10%
• Double Hysteresis Loop 10%
• Temperature Polarization 10%
• Nanobeam Electron Diffraction 10%
• Antiferroelectric Materials 10%
• Heterostructure 10%
• Layer Thickness 10%
• Epitaxial Heterostructures 10%
• Electric Field Measurement 10%
• Rhombohedral Structure 10%
• Antiferroelectric 10%