Abstract
A plasma-based 'dry' process has been developed for the etching of tin oxide for high-resolution patterning. The process uses low concentration chlorine as the reactant gas with resultant etch rates of 42 nm/min. The minimum feature size is less than 5 μm. The process is highly planar with a uniform etch across a 13 × 10 cm substrate area. No polymer formation was observed.
Original language | English |
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Pages (from-to) | 197-199 |
Number of pages | 3 |
Journal | Proceedings of the SID |
Volume | 32 |
Issue number | 3 |
Publication status | Published (in print/issue) - 1991 |
Event | Japan Display '89 - Kyoto, Jpn Duration: 1 Oct 1989 → 1 Oct 1989 |
Bibliographical note
Copyright:Copyright 2004 Elsevier B.V., All rights reserved.