High-resolution patterning of thin-film transparent conductors by dry etching

P. Maguire, S. Laverty, J. Shields, J. McLaughlin, J. Anderson

    Research output: Contribution to journalConference articlepeer-review

    1 Citation (Scopus)

    Abstract

    A plasma-based 'dry' process has been developed for the etching of tin oxide for high-resolution patterning. The process uses low concentration chlorine as the reactant gas with resultant etch rates of 42 nm/min. The minimum feature size is less than 5 μm. The process is highly planar with a uniform etch across a 13 × 10 cm substrate area. No polymer formation was observed.

    Original languageEnglish
    Pages (from-to)197-199
    Number of pages3
    JournalProceedings of the SID
    Volume32
    Issue number3
    Publication statusPublished - 1991
    EventJapan Display '89 - Kyoto, Jpn
    Duration: 1 Oct 19891 Oct 1989

    Bibliographical note

    Copyright:
    Copyright 2004 Elsevier B.V., All rights reserved.

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