Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors

Sanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin, Subhadeep Mukhopadhyay

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Simulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.
    Original languageEnglish
    Pages (from-to)32-36
    Number of pages5
    JournalJournal of Semiconductor Devices and Circuits
    Volume3
    Issue number2
    DOIs
    Publication statusPublished - 2016

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